Equipment & Reservations

STS Pegasus. For Silicon etching. No metals allowed.

Precision 5-axis (XYZ + tip/tilt) stage with 2 additional manual z-stages, traditionally used for e-jet.

Electronic Visions (EVG) Wafer Bonding System 501, capable of heating to 500°C and applying force of up to 3.5kN (Max force depends on sample and bondtool material and geometry).

System Used to Mount Carrier Wafers for the Through Etching on the STS

Scribing tool offers a quick method for cleanly downsizing large samples. 

 K&S 708 Dicing Saw; 4" Spindle, User must supply own blades

Midas Six-Station Plating System, 1-Liter. Temp up to 100C. The first station is designed for electrocleaner, the second for acid dip, the third for plating. Remaining three stations are for rinse. First step in training is to determine if electroplating process allowed in this too

Thermionics 4-pocket E-beam Evaporator. QCM for deposition thickness monitoring.

Required for monitoring HF waste generation

Talboys Hotplate

Fume Hood in Prep Room for Hazardous Materials

Laurell WS-400 in Glovebox

KSV Instruments Model: CAM 200

Thermal Technology, Model 1000-4560-FP20. Capable of temperatures up to 1750°C (up to 2250°C with system modification). Max sample size is 1cmx1cm.

Plasmatherm SLR 770, BOSCH Process

Glassware required to KOH etch pieces or wafers

 Lapmaster, 12" Platen

Electronic Visions (EVG) Double-Sided Aligner 620. Mask size 4x4" or 5x5". Substrate size 4", 3", 2" diameter or 1" pieces

Electronic Visions (EVG) Double-Sided Aligner 420, Wavelength 405nm. Mask size 5x5" and substrate 4" diameter

MJB3 Suss Aligner. Mask size 4x4", 3x3", or 2x2". Substrate size 3" or 2" diameter or pieces

The Leica DMIRE inverted microscope has top and bottom illumination along with a UV light source and a motorized stage. There are 3 light cubes for fluorescence work including DAPI (Ex 360nm/Em 470nm), FITC (Ex 480nm/Em 527nm), and Rhodamine (Ex 546nm/Em 600nm) as well as a brightfield cube. The spectral outputs of the cubes are on a data sheet near the microscope. There are 5 objectives including 2.5X, 5X, 10X, 20X, and 50X. The microscope does have a camera and software for image generation

Near infrared (1000nm-1300nm) imaging microscope with 4 objectives of 2.5x, 5x, 20x, and 50x magnification with eyepieces of 15x.

The Olympus microscope has eyepieces of 10x magnification with a reticle and 4 objectives of 5x, 10x, 20x, 50x, and 100x magnification.  Capable of Nomarski (DIC) microscopy, brightfield and darkfield

 Applied MicroStructures, Model 100, Molecular Vapor Deposition

Yamato, Mechanical Convection Oven.

The vacuum annealing system has a maximum operating temperature of 400°C and uses nitrogen as a purge gas to reduce contamination.

 Signatone S-1170

Alpha Step D-500 - 2µm tip

Reactive Ion Etcher, O2, Ar, CF4, 500W RF, Computer Controlled

Reactive Ion Etcher, O2, Ar, ArH2, 300W RF, Manually Controlled

Tungsten filament SEM with both high vacuum (4.5nm resolution) and low vacuum (10nm resolution) modes. Low vauum (N SEM or Environmental SEM) mode capable of 0.01 - 2 Torr pressure control for biological and non-conductive sample microscopy. Detectors include SE, Robinson BSE, Solid State BSE, and Oxford INCA EDS

Hitachi S570 Scanning Electorn Microscope. 20X-100kX magnification w standard specimen stage .12X-100kX with large-sized specimin stage. 0.5-30kV accelerating voltage. 150mm maximum specimen diameter. 6mm, 15mm, or 50mm diameter stub size

Oxford INCA EDS Detector for Hitachi S-2250N SEM

Used for drilling single or multiple holes/shapes into brittle materials (i.e. Si, SiO2, Al2O3, etc.)

 BidTec SP-100, 0-7500 rpm, 15" Bowl

BidTec SP-100, 0-7500 rpm, 15" Bowl

CEE-100, 0-10,000 rpms

 8 Gun Metal Targets - See system for material list

3 Gun Dielectric Targets - See system for material list

Tousimis Automegasamdry -915B: 6" and smaller sample size

Precision 4-axis (XYZ + rotation) stage, accepts 1"x3" glass slides held by vacuum chuck.

Precision 3-axis (XYZ), with 30W 805nm CW diode laser with a dichoric filter.

Max Temp 1200°C. Used for annealing silicon. No metals or other materials allowed.

 Max Temp 1200°C. Used for boron doping Silicon. No metals or other materials allowed.

Max Temp 1200°C. General use tube.

Max Temp 1200°C. Used for growing thermal oxide films on Silicon. No metals or other materials allowed.

 Max Temp 1200°C. Used for phosphorus doping Silicon. No metals or other materials allowed.

Polytec laser vibrometer is used to measure displacement or velocity of vibrations. The Polytec OFV-3001, frequency range: DC to 20MHz, velocity rang: 0.3um/s to 10m/s.